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Design and simulation of cmos based low voltage bandgap reference circuitry/Tan Chin Ling

Design and simulation of cmos based low voltage bandgap reference circuitry
Kajian ini bertujuan untuk mengkaji prestasi litar sela jalur dengan menggunakan transistor semikonduktor oksida logam (MOS) bagi menggantikan litar transistor simpang dwikutub (BJT). Sebagaimana yang diketahui, BJT mempunyai ciri-ciri yang lebih baik terhadap suhu, namun begitu, BJT memerlukan voltan ambang yang lebih tinggi untuk beroperasi berbanding MOS transistor. Oleh sebab itu, BJT telah digantikan dengan MOS transistor untuk meningkatkan prestasi sela jalur bagi aplikasi voltan yang lebih rendah daripada 1.2V dan juga untuk mengurangkan proses fabrikasi. Hasil daripada Op-Amp, ia mampu mencapai gandaan sebanyak 74.34dB dan 62.16 degree pada tahap fasa margin yang mana ianya stabil bagi integrasi dengan litar sela jalur. Selepas itu, litar Op-Amp telah dimasukkan ke dalam reka bentuk sela jalur yang lengkap. Reka bentuk litar sela jalur yang dicadangkan dapat mencapai prestasi yang menghasilkan voltan rendah maksimum kira-kira 446.05mV dan minimum 440.2mV pada julat suhu -10 ℃ kepada 100 ℃. Selain itu, voltan rujukan yang dihasilkan adalah stabil selepas voltan bekalan lebih tinggi daripada 1.2V digunakan. Ini bermakna litar masih mampu untuk menyediakan voltan rujukan yang tepat dan stabil dengan pelbagai variasi perubahan bekalan voltan. Tambahan juga, litar mempunyai nilai PSRR tinggi pada -70.59 dB untuk memastikan ruang yang cukup dalam mengurangkan hasil bunyi daripada pembekalan voltan. Walau bagaimanapun, litar mempunyai pekali suhu yang lebih tinggi iaitu 118.12 ppm / ℃. Akhir sekali, reka bentuk ini telah dilengkapi dengan susun atur simulasi akhir dan kawasan litar sela jalur termasuk ‘dummy’ telah menggunakan 133μm x 140μm. ___________________________________________________________________________________ The objective of this thesis is to study the performance of the BGR circuit by using Metal Oxide Semiconductor (MOS) transistor to replace the Bipolar Junction Transistor (BJT) circuit. As known bipolar transistor is better characterize over temperature. However, bipolar transistor required a high threshold voltage to operate as compared to MOS transistor; Therefore, the bipolar transistor has replaced by MOS transistor to improve performance of BGR for low voltage application lower than 1.2V and to reduce fabrication process. The result of the Op-Amp has shown it able to achieve 74.34dB gain as well as 62.16 degree of phase margin, which stable for integration with BGR circuit. After that, the Op-Amp circuit is then incorporate into the design of for a complete BGR architecture. The proposed design of BGR circuit able to achieve similar performance, which produce the maximum low voltage about 446.05mV and the minimum of 440.2mV at a temperature range of -10℃ to 100 ℃. Besides, the reference voltage generated is stable after the supply voltage higher than 1.2V, which meant the circuit are still able to provide accurate and stable reference voltage for a variety of supply voltage changes. Furthermore, the circuit has high PSRR values at -70.59 dB, to ensure enough headroom for noise rejection from the supply voltage. However, the circuit has a higher temperature coefficient which is 118.12 ppm /℃ . Lastly, the design completed with post-layout simulation and the area of BGR circuit including dummy are being consume of 133μm x 140μm of die area.
Contributor(s):
Tan Chin Ling - Author
Primary Item Type:
Thesis
Identifiers:
Barcode : 00003103369
Accession Number : 875005983
Language:
English
Subject Keywords:
Bipolar Junction Transistor (BJT) ; BGR circuit ; , bipolar transistor
First presented to the public:
8/1/2016
Original Publication Date:
5/5/2020
Previously Published By:
Universiti Sains Malaysia
Place Of Publication:
School of Electrical & Electronic Engineering
Citation:
Extents:
Number of Pages - 92
License Grantor / Date Granted:
  / ( View License )
Date Deposited
2020-05-05 13:35:16.879
Submitter:
Nor Hayati Ismail

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