DC measurement at different parameters of temperature and process in GaAs MESFET device show that it changes the device behavior especially in providing a constant quiescent current. In order to get a better performance from GaAs monolithic microwave integrated circuit chip is to use a suitable biasing circuit that can reduce the process and temperature variations. The objective of this work is to analyze and benchmark three types of GaAs MESFET bias-circuit methods. The three bias circuits are voltage divider, source-feedback resistance and gate and source resistance feedback. DC simulation by ADS software using the Curtice transistor model and a DC circuit analysis is the most important method to achieve the objective of this project. As the result, the three bias circuit performances against process and temperature variations have been benchmarked. The value of DTOIVδδ for voltage divider, source feedback resistance and a combination of gate and source resistance feedback are 40mA/V, 3mA/V, and 0mA/V respectively and DIδδβ for voltage divider, source feedback resistance and a combination of gate and source resistance feedback are 65mV2, 2mV2, and 2mV2 respectively. The conclusion made that the use of combination gate and source-resistance feedback method show the overall performance improvement compared to other methods.
BIAS CIRCUIT METHODS TO REDUCE_Mazurawaty bt Ab Rashid_E3_2007_NI