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Micro and millimeter wave integrated circuit (mmwic) amplifier / Ng Xiang Rhung

Micro and millimeter wave integrated circuit (mmwic) amplifier_Ng Xiang Rhung_E3_2009_875004547_000030953702_NI
Tujuan projek ini adalah untuk mereka bentuk amplifier yang mempunyai bunyi bising yang rendah (LNA) dan amplifier kuasa sederhana (MPA) pada frekuensi 30GHz berdasarkan 0.15um “pHEMT” teknologi. Perisian ADS telah digunakan dalam projek ini untuk mengendalikan proses simulasi. LNA dan MPA dalam projek ini telah menggunakan kaedah yang hampir sama iaitu membuat takrifan untuk ciri peranti, rangkaian pincangan, rangkaian kestabilan, input dan output rangkaian yang padan, melata tahap tunggal litar dan bentangan reka bentuk. Pada bekalan voltan 3.0V dan frekuensi 30 GHz, LNA dua tahap ini berupaya untuk mencapai keuntungan linear sebanyak 21.628 dB, angka hingar 2.509 dB dan output merujuk pada titik 1dB mampatan -11.003dBm, bekalan kuasa penuh yang digunakan oleh LNA adalah 174mW. Dua peringkat MPA dengan bekalan voltan 6.0V pada 30 GHz frekuensi pengendalian ini berupaya untuk mencapai keuntungan linear (S21) 13.236 dB, P1dB 22.455dBm, gandaan kuasa 11.055 dB dan PAE 14.606% dan penggunaan kuasa penuh untuk MPA adalah 1.122W. 30GHz LNA dan PA boleh digunakan dalam satelit siaran langsung (DBS), radar automotif pemancar dan penerima masing-masing. _________________________________________________________________________________________ The aim of this project was to design low noise (LNA) and medium power amplifier (MPA) at 30GHz based on 0.15um GaAs Power Pseudomorphic High Electron Mobility Transistor pHEMT technology. The simulation was performed using ADS. The LNA and MPA in this project are using the same methodology that is define the device characteristic, biasing network, stability network, input and output matching network, cascading the single stage circuit and design layout. At a supply voltage of 3.0V and 30 GHz operating frequency, this two-stage LNA achieves an associated gain of 21.628 dB, noise figure (NF) of 2.509 dB and output referred 1dB compression point (P1dB) of -11.003dBm, the total power consumptions for the LNA is 174mW. At a supply voltage of 6.0V and 30 GHz operating frequency, a 2-stage MPA achieves a linear gain (S21) of 13.236 dB, P1dB of 22.455dBm, power gain of 11.055 dB and the PAE of 14.606% and the total power consumptions for the MPA is 1.122W. The 30GHz LNA and PA can be applied in direct broadcast satellite (DBS), automotive radar transmitter and receiver respectively.
Contributor(s):
Ng Xiang Rhung - Author
Primary Item Type:
Final Year Project
Identifiers:
Accession Number : 875004547
Language:
English
Subject Keywords:
Power Pseudomorphic; High Electron; Mobility Transistor
First presented to the public:
4/1/2009
Original Publication Date:
11/1/2018
Previously Published By:
Universiti Sains Malaysia
Place Of Publication:
School of Electrical & Electronic Engineering
Citation:
Extents:
Number of Pages - 127
License Grantor / Date Granted:
  / ( View License )
Date Deposited
2018-11-01 12:19:35.427
Date Last Updated
2019-01-07 11:24:32.9118
Submitter:
Nor Hayati Ismail

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Micro and millimeter wave integrated circuit (mmwic) amplifier / Ng Xiang Rhung1 2018-11-01 12:19:35.427