(For USM Staff/Student Only)

EngLib USM > Ω School of Electrical & Electronic Engineering >

Design of power amplifier for ultra-wideband (uwb) applications using silterra 0.18 μm cmos technology/ Yap Hock Lian

Design of power amplifier for ultra-wideband (uwb) applications using silterra 0.18 μm cmos technology_Yap Hock Lian_E3_2006_NI
Penguat kuasa untuk sistem transceiver Ultra-Wideband (UWB) telah direkabentuk. UWB adalah satu teknologi perhubungan tanpa talian khas untuk jarak dekat (kurang daripada 10m) yang mampu mencecah kadar penghantaran data sehingga 480 Mbps. UWB adalah teknologi berkuasa rendah yang mampu wujud serentak dengan kehadiran teknologi Bluetooth, GPS dan WiFi. Penguatkuasa yang direkabentuk adalah khas untuk sistem transceiver UWB yang mengaplikasikan teknik “direct conversion” dan MB-OFDM (Multi-band Orthogonal Frequency Division Multiplexing) serta beroperasi dalam mod satu UWB iaitu frekuensi dalam lingkungan 3.1 GHz hingga 4.9 GHz. Penguat kuasa ini direkabentuk menggunakan teknologi Silterra 0.18μm CMOS dan hasil rekabentuk adalah dalam tiga versi iatiu IDEAL, SIL18RF dan ASITIC. Penguat kuasa ini telah direka menggunakan gegelung dalam SIL18RF dan gegelung ASITIC. Penguat kuasa dengan component ideal memperoleh S11 < -31 dB, S12 < -75 dB, S21 = 19.45 ± 0.64 dB dan S22 < -10 dB. Kes IDEAL juga memperoleh input referred 1 dB compression point, -17.44 dBm dan kuasa keluran maximumum, 1.49 dBm dengan menggunakan kuasa DC sebanyak 31.3 mW. Di samping itu, kes SIL18RF memperoleh S11 < -10 dB, S12 < -82 dB, S21 = 16.39 ± 0.68 dB dan S22 < -10.3 dB sementara kes ASITIC memperoleh S11 < -25 dB, S12 < -82 dB, S21 = 19.66 ± 1.45 dB dan S22 < -10.8 dB. SIL18RF mendapat input referred 1 dB compression point, -14.4 dBm dan kuasa keluaran maximum sebanyak 1.38 dBm sementara ASITIC mendapat input referred 1 dB compression point, -13.57 dBm dan kuasa keluaran maximum sebanyak 2.12 dBm. Kes SIL18RF dan ASITIC hanya menggunakan kuasa DC sebanyak 30.87 mW dan 31.63mW masing-masing. Layout SIL18RF iaitu 3.7mmx2.6mm adalah lebih besar daripada layout ASITIC yang dianggarkan sebanyak 0.55mmx0.85mm. Satu PCB (Printed Circuit Board) dengan dimensi 60mmx80mm telah direka untuk mengukur chip SIL18RF. Selain daripada rekabentuk penguatkuasa, satu kerja pengukuran telah dijalankan ke atas MAX2242EVKIT menggunakan alatan RF yang canggih. Daripada hasil pengukuran, didapati MAX2242 mengeluarkan kuasa keluaran sebanyak 26 dBm dengan kuasa masukan 5 dBm pada bekalan kuasa 3.3V. _________________________________________________________________________________________ A power amplifier for Ultra-Wideband (UWB) transceiver system is presented. UWB is a high data rates (up to 480 Mbps) wireless communication technology for short distance (less than 10m) applications. UWB technology is a low power (-41.3 dBm/MHz) wireless communications that can coexist with the existing technology such as Bluetooth, GPS (Global Positioning System) and WiFi. The power amplifier is designed for UWB direct conversion (DICON) transceiver system that employs Multi-band Orthogonal Frequency Division Multiplexing (MB-OFDM) approach and operates in mode 1 (3.1 to 4.9GHz) of UWB spectrum. The power amplifier is designed using Silterra 0.18μm CMOS technology in three different version which consists of IDEAL, SIL18RF and ASITIC case. The power amplifier has been implemented in two versions which are SIL18RF inductor and ASITIC inductor. IDEAL case achieved S11 < -31 dB, S12 < -75 dB, S21 = 19.45 ± 0.64 dB and S22 < -10 dB. IDEAL version also achieved input referred 1 dB compression point of -17.44 dBm and maximum output power of 1.49 dBm while consuming only 31.3 mW. On the other hand, SIL18RF version achieved S11 < -10 dB, S12 < -82 dB, S21 = 16.39 ± 0.68 dB and S22 < -10.3 dB while ASITIC version achieved S11 < -25 dB, S12 < -82 dB, S21 = 19.66 ± 1.45 dB and S22 < -10.8 dB. SIL18RF version obtained input referred 1 dB compression point of -14.4 dBm and maximum output power of 1.38 dBm while ASITIC version achieved input referred 1 dB compression point of -13.57 dBm and maximum output power of 2.12 dBm. SIL18RF and ASITIC version only consume 30.87 mW and 31.63mW respectively. The layout dimension of SIL18RF version is 3.7mm x 2.6mm which is bigger than ASITIC version estimated to be 0.55mm x 0.85mm. A PCB (Printed Circuit Board) with dimension of 60mm x 80mm has been designed to characterize SIL18RF fabricated chip. Beside power amplifier design, a measurement task has been carried out to evaluate the performance of MAX2242EVKIT using radio frequency high end tools. From measurement results, MAX2242 can produce +26 dBm output power at 5 dBm input power and 3.3V power supply.
Contributor(s):
Yap Hock Lian - Author
Primary Item Type:
Final Year Project
Language:
English
Subject Keywords:
transceiver system; wireless; fabricated chip
First presented to the public:
5/1/2006
Original Publication Date:
12/6/2018
Previously Published By:
Universiti Sains Malaysia
Place Of Publication:
School of Electrical & Electronic Engineering
Citation:
Extents:
Number of Pages - 94
License Grantor / Date Granted:
  / ( View License )
Date Deposited
2018-12-07 10:34:06.238
Date Last Updated
2019-01-07 11:24:32.9118
Submitter:
Nor Hayati Ismail

All Versions

Thumbnail Name Version Created Date
Design of power amplifier for ultra-wideband (uwb) applications using silterra 0.18 μm cmos technology/ Yap Hock Lian1 2018-12-07 10:34:06.238