(For USM Staff/Student Only)

EngLib USM > Ω School of Electrical & Electronic Engineering >

Modelling and simulation of rf mems switch / Mohd Izahamuddin Bin Hamzah

Modelling and simulation of rf mems switch_Mohd Izahamuddin Bin Hamzah_E3_2010_875003563_00003084253_NI
Suis radio-frekuensi mikro-elektro-mekanikal sistem dengan fasa dwistabil berdasarkan penggerak electromagnet, suis mempunyai 2 kedudukan stabil disebabkan kehadiran magnet kekal, justeru itu kuasa yang digunakan oleh peranti adalah rendah. Dengan penggerak electromagnet dari gegelung rata, rasuk penyokong boleh berubah dari satu kedudukan kepada kedudukan yang lain. Rekabentuk suis di simulasikan dengan menggunakan perisian conventorware. Denyut arus digunakan adalah 50mA untuk menggerakkan suis antara dua fasa kedudukan stabil yang sesuai dengan simulasi dan masa pensuisan hanya lebih kurang 20μs. Kehilangan sisipan ialah -11dB dan nilai pengasingan ialah -43dB pada 3 GHz. 3GHz ialah frekuensi untuk frekuensi radio. Biasanya radio frekuensi antara 3 kHz hingga 300 GHz. 3GHz ialah frekuensi maksimum untuk peranti suis RF MEMS bersaiz mikro. ____________________________________________________________________________________ A radio-frequency micro-electro-mechanical systems (RF MEMS) switch with bistable states based on electromagnetic actuation is presented. The switch has two stable positions due to the adoption of the permanent magnet, which will lead to a lower power consumption of the device. With electromagnetic actuation arising from the planar coils, the cantilever beam can switch from one stable position to the other. The design of the switch is simulated by coventorware software. A current pulse with amplitude of 50 mA is needed for the fabricated switches switching between two stable states that is in good agreement with simulation and the switching time is only approximately 20μs. The insertion loss is -0.11dB and the isolation are -43dB at 3 GHz. 3GHz is frequency for Radio frequency. Basically radio frequency is within 3 kHz to 300 GHz. 3GHz is the maximum frequency for the micro size of RF MEMS switch device.
Contributor(s):
Mohd Izahamuddin Hamzah - Author
Primary Item Type:
Final Year Project
Identifiers:
Accession Number : 875003563
Barcode : 00003084253
Language:
English
Subject Keywords:
A radio-frequency micro-electro-mechanical systems (RF MEMS) switch with bistable states based on electromagnetic actuation; switch has two stable positions due to the adoption of the permanent magnet, which will lead to a lower power consumption of the device. With electromagnetic actuation arising from the planar coils, the cantilever beam can switch from one stable position; pulse with amplitude of 50 mA is needed for the fabricated switches switching between two stable states that is in good agreement with simulation and the switching time is only approximately 20μs. The insertion loss is -0.11dB and the isolation are -43dB at 3 GHz. 3GHz is frequency for Radio frequency. Basically radio frequency is within 3 kHz to 300 GHz. 3GHz is the maximum frequency for the micro size of RF MEMS switch device.
First presented to the public:
4/1/2010
Original Publication Date:
3/19/2018
Previously Published By:
Universiti Sains Malaysia
Place Of Publication:
School of Electrical & Electronic Engineering
Citation:
Extents:
Number of Pages - 48
License Grantor / Date Granted:
  / ( View License )
Date Deposited
2018-03-19 16:40:42.685
Date Last Updated
2019-01-07 11:24:32.9118
Submitter:
Nor Hayati Ismail

All Versions

Thumbnail Name Version Created Date
Modelling and simulation of rf mems switch / Mohd Izahamuddin Bin Hamzah1 2018-03-19 16:40:42.685