Dalam laporan ini, topologi dan rekabentuk LNA serta keseimbangan antara parameter telah dibincangkan. Topologi induktif ternyahjana telah dipilih bagi mereka bentuk LNA jalur lebar. Proses mereka bentuk LNA dimulakan dengan membina LNA jalur sempit. Setelah keputusan daripada litar tersebut dianalisis dan boleh diguna pakai, litar tersebut diteruskan pembinaan kepada litar jalur lebar. Bagi mencapai matlamat jalur lebar tersebut, penapis RF telah digunakan di peringkat masukan. Dengan penggunaan teknologi CMOS, hasil simulasi menunjukkan bahawa litar yang direka hanya memerlukan sumber kuasa sebanyak 1.2V. Hasil keputusan menunjukkan, pekali pantulan masukan, S11 adalah -10dB (870MHz-2.1GHz), capaian gandaan kuasa, S21 adalah 10.08dB-7.53dB (870MHz-2.1GHz), NF adalah 3.68dB-6.05dB (870MHz-
2.1GHz) serta penggunaan arus pada 16mA.
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In this report, the design and the trade-off between topologies for Low- noise amplifier was discussed as well as the parameter. Inductively degenerated LNA architecture is use to design the broadband low noise amplifier. The designing process started from the building of narrowband LNA. Then after the results being analysed, the design continue for the LNA to be able to operate in broadband frequency. To achieve this wideband requirement, RF microwave filter was implemented at the input stage of the design. Silterra 0.13µm CMOS technology fabrication process was used in the design simulations. With the usage of the CMOS technology, the simulation results show that the design required 1.2V power supply. The input reflection coefficient, S11 of -10dB (870MHz-2.1GHz), power gain S21 of 10.08dB-7.53dB (870MHz-2.1GHz), noise figure of 3.68dB-6.05dB (870MHz-2.1GHz) and current consumption of 16mA.
0.13μm cmos broadband low noise amplifier for universal radio receiver_Muhamad Syafiq Nawawi_E3_2014_NI