Dalam pengkajian ini, InGaAs/AlAs digunakan sebagai bahan-bahan utama untuk RTD. Operasi RTD adalah berdasarkan kuantum mekanik, iaitu partikel-partikel akan menembusi dinding penghalang. Simulasi MATLAB digunakan demi mengkaji teori dan prinsip RTD. Parameter-paramter yang tidak diketahui seperti A, B, C, D, n1, n2, and H perlu ditentukan melalui perhitungan agar lengkungan IV yang disimulasi selaras dengan lengkungan IV yang diberikan. Parameter-parameter bagi struktur RTD seperti ketebalan dinding penghalang dan lain-lain perlu diperoleh selepas proses simulasi. Selain itu, gambah rajah litar bagi RTD direka dan dilukis dengan menggunakan LTspice dan disimulasi seterusnya. “Library file” bagi litar RTD dibuat untuk perkembangan masa depan. Pengkajian ini agak berjaya kerana keputusan yang didapat agak memuaskan. Lengkungan IV yang didapati melalui simulasi MATLAB dapat selaras dengan lengkungan IV yang diberikan dan nilai-nilai parameter bagi struktur RTD yang didapati boleh diterima. Di samping itu, lengkungan IV yang didapati melalui simulasi LTspice adalah selaras dengan lengkungan IV yang diberikan dan “library file” bagi litar RTD dibuktikan dapat berfungsi melalui simulasi LTspice.
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In this research, the material InGaAs/AlAs is used as the material for the double barriers resonant tunnelling diode (RTD). The operation of RTD is based on the quantum mechanics, in which the particles will pass through the barrier walls by tunnelling method. In order to study the theory and the principle of the RTD devices, curve fitting using MATLAB had been simulated. The unknown parameter such as A, B, C, D, n1, n2, and H need to be determined through calculation to ensure the simulated IV curve is fitted with the measured IV curve. The device structural parameters such as the effective mass, quantum well thickness and the barrier thickness are obtained after the simulation. Furthermore, the large signal representation of RTD is drawn using LTspice and simulated afterwards. The library file for the large signal representation of RTD is then created for the future development. From the results obtained, it can be concluded that this research is a success. The MATLAB simulated IV curve is fitted with the measured result and the device structural parameters are within the acceptable range. Moreover, the LTspice simulated result is fitted with the measured IV curve as well as the library file was proved its correctness after the simulation.
Quantum device modelling of the ingaasalas resonant tunnelling diode / Lim Kah Hooi