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0.13 π›π’Ž cmos class f rf power amplifier for iot application

0.13 π›π’Ž cmos class f rf power amplifier for iot application / Liew Xin Ye
Industri Objek Rangkaian Internet (IoT) terus berkembang dalam beberapa tahun kebelakangan ini. Reka bentuk penguat kuasa Frekuensi Radio (RF) yang bercekapan tinggi adalah penting untuk mengurangkan penggunaan kuasa bagi sistem penghantaran data yang berkapasisti tinggi dan cepat. Tesis ini membentangkan 0.13 ΞΌm CMOS Penguat Kuasa (PA) Class F Frequensi Radio (RF) yang direka untuk aplikasi Objek Rangkaian Internet (IoT) 2.45 GHz. Reka bentuk penguat kuasa terdiri daripada 3 bahagian termasuk litar pencocokan Masukan Impedans (IIP), litar penamatan harmonik Class F dan litar pencocokan Keluaran Impedans (OIP). Carta Smith untuk RF dan alat analisis perisian Cadence telah digunakan untuk menjayakan reka ini. Untuk pemancar Bluetooth Tenaga Rendah (BLE), sekurang-kurangnya 4 dBm kuasa keluaran diperlukan untuk menghantar isyarat dalam piawaian BLE. Dari sudut prestasi, PA ini mampu menyampaikan gandaan kuasa 5.79 dB dan pengeluaran kuasa 5.79 dBm dalam operasi frequensi 2.45 GHz pada puncak Kecekapan Kuasa Tambahan (PAE) yang sebanyak 31.62% dengan Titik Pemintasan Pengeluaran Maksima Tahap Ketiga (OIP3) sebanyak 8 dBm. Pengeluaran maksima OIP3 reka ini adalah 15.7 dBm. Pada kuasa keluaran sebanyak 4 dBm (piawaian BLE), gandaan kuasa PA ini adalah 7.34 dB dengan PAE sebanyak 30% dan OIP3 sebanyak 13 dBm. Pada operasi frequensi 2.45 GHz, PA mempamerkan nilai kestabilan, k-faktor melebihi 1. Oleh itu, PA mampu beroperasi dalam rantau stabil tanpa syarat. PA menunjukkan prestasi parameter-S yang baik iaitu 𝑆11 mencapai sebanyak -19.25 dB dan 𝑆22 mencapai sebanyak -13.97 dB. Prestasi PA ini dicapai dengan menggunakan punca kuasa 1.2 V. _______________________________________________________________________________________________________ Internet of Things (IoT) industry keep growing in recent years. The design of RF power amplifier with high efficiency is thus crucial to reduce power consumption needed for data transmission which is high in capacity and speed. This project is a 0.13 ΞΌm CMOS Class-F Radio Frequency (RF) Power Amplifier (PA) which is designed for 2.45 GHz IoT application. The power amplifier design in this project consists of 3 parts including Input Impedance (IIP) match circuit, Class-F harmonics termination circuit and Output Impedance (OIP) match circuit. Smith chart for RF and Cadence software analysis tools are used in this design. For Bluetooth Low Energy (BLE), at least 4 dBm of output power is needed for signal transmission in BLE standard. In terms of performance, this PA design has power gain of 5.79 dB and output power of 5.79 dBm at operating frequency 2.45 GHz for the maximum Power Added Efficiency (PAE) of 31.62% with Output Third Order Intercept Point (OIP3) of 8 dBm. The maximum Output Third Order Intercept Point (OIP3) for this design is 15.7 dBm. At output power of 4 dBm (BLE standard), the PA’s power gain is 7.34 dB with PAE of 30% and OIP3 of 13 dBm. At the operating frequency of 2.45 GHz, the PA exhibits stability k-factor, 𝐾𝑓 value of more than 1 and thus the PA is unconditionally stable. Besides, the PA shows S-parameters performance of -19.25 dB for 𝑆11 and -13.97 dB for 𝑆22. These performances of PA are achieved at power supply of 1.2 V.
Contributor(s):
Liew Xin Ye - Author
Primary Item Type:
Final Year Project
Identifiers:
Accession Number : 875008615
Language:
English
Subject Keywords:
(IoT); RF; data
First presented to the public:
5/1/2019
Original Publication Date:
2/26/2020
Previously Published By:
Universiti Sains Malaysia
Place Of Publication:
School of Electrical & Electronic Engineering
Citation:
Extents:
Number of Pages - 96
License Grantor / Date Granted:
  / ( View License )
Date Deposited
2020-02-26 16:53:23.079
Date Last Updated
2020-11-26 10:42:23.239
Submitter:
Mohd Jasnizam Mohd Salleh

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