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0.13μm cmos broadband low noise amplifier for universal radio receiver/Muhamad Syafiq Nawawi

0.13μm cmos broadband low noise amplifier for universal radio receiver_Muhamad Syafiq Nawawi_E3_2014_NI
Dalam laporan ini, topologi dan rekabentuk LNA serta keseimbangan antara parameter telah dibincangkan. Topologi induktif ternyahjana telah dipilih bagi mereka bentuk LNA jalur lebar. Proses mereka bentuk LNA dimulakan dengan membina LNA jalur sempit. Setelah keputusan daripada litar tersebut dianalisis dan boleh diguna pakai, litar tersebut diteruskan pembinaan kepada litar jalur lebar. Bagi mencapai matlamat jalur lebar tersebut, penapis RF telah digunakan di peringkat masukan. Dengan penggunaan teknologi CMOS, hasil simulasi menunjukkan bahawa litar yang direka hanya memerlukan sumber kuasa sebanyak 1.2V. Hasil keputusan menunjukkan, pekali pantulan masukan, S11 adalah -10dB (870MHz-2.1GHz), capaian gandaan kuasa, S21 adalah 10.08dB-7.53dB (870MHz-2.1GHz), NF adalah 3.68dB-6.05dB (870MHz- 2.1GHz) serta penggunaan arus pada 16mA. ______________________________________________________________________________________ In this report, the design and the trade-off between topologies for Low- noise amplifier was discussed as well as the parameter. Inductively degenerated LNA architecture is use to design the broadband low noise amplifier. The designing process started from the building of narrowband LNA. Then after the results being analysed, the design continue for the LNA to be able to operate in broadband frequency. To achieve this wideband requirement, RF microwave filter was implemented at the input stage of the design. Silterra 0.13µm CMOS technology fabrication process was used in the design simulations. With the usage of the CMOS technology, the simulation results show that the design required 1.2V power supply. The input reflection coefficient, S11 of -10dB (870MHz-2.1GHz), power gain S21 of 10.08dB-7.53dB (870MHz-2.1GHz), noise figure of 3.68dB-6.05dB (870MHz-2.1GHz) and current consumption of 16mA.
Contributor(s):
Muhamad Syafiq Nawawi - Author
Primary Item Type:
Final Year Project
Language:
English
Subject Keywords:
topologies ; amplifier; fabrication
First presented to the public:
6/1/2013
Original Publication Date:
1/16/2020
Previously Published By:
Universiti Sains Malaysia
Place Of Publication:
School of Electrical & Electronic Engineering
Citation:
Extents:
Number of Pages - 52
License Grantor / Date Granted:
  / ( View License )
Date Deposited
2020-01-16 15:05:37.183
Date Last Updated
2020-11-11 14:19:03.035
Submitter:
Nor Hayati Ismail

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