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2d physical modelling of delta-doped ingaasinalas pseudomorphic high electron mobility transistor (phemt)

2d physical modelling of delta-doped ingaasinalas pseudomorphic high electron mobility transistor (phemt) / Balamurali Sundararaj

Abstract Pencarian berterusan untuk menyempurnakan kehendak industri semikonduktor akan kekal selama-lamanya. Pembelajaran, penyelidikan dan penyiasatan saintifik dijalankan secara mendalam untuk menambah baik peranti dan struktur terutamanya dalam bidang transistor kesan-medan (FET). Hasil penting daripada penyelidikan ini ialah lahirnya ‘pseudomorphic High Electron Mobility Transistor (pHEMT)’, yang merupakan satu variasi ‘High Electron Mobility Transistor (HEMT)’. pHEMT digunakan secara meluas dalam telekomunikasi tanpa-wayar dan penguat bunyi rendah (LNA). Projek ini secara amnya mengesyorkan pemodelan dua-dimensi pHEMT InGaAs/InAlAs campuran-delta menggunakan perisian MATLAB. Model-model melalui kaedah teori dan eksperimen telah dibina dan dibandingkan untuk mengenalpasti respon arus saluran, IDS untuk pelbagai voltan gate-bias, VGS terhadap voltan saliran-sumber, VDS dalam mod deplesi pHEMT. Demi objektif menyamakan plot teori dengan plot eksperimen, kaedah empirikal telah diaplikasikan diikuti Reka Bentuk Eksperimen (DOE) untuk menyiasat faktor yang mempengaruhi penyamaan plot. Kesimpulannya, penyamaan plot telah dicapai dan elekton mobiliti, μn telah dikenalpasti sebagai faktor yang paling signifikan dalam proses menyamakan plot ini. Model yang telah dibangunkan ini boleh digunakan untuk kegunaan pembelajaran tentang pHEMT dan tingkah lakunya. _______________________________________________________________________________________________________ There exists a continuous quest to fulfil the needs of semiconductor industry. Studies, researches and scientific investigations are being carried out thoroughly to further enhance the devices and structures especially in the field of Field Effect Transistors (FET). A product of fruitful researches is pseudomorphic High Electron Mobility Transistor (pHEMT), a variation of High Electron Mobility Transistor (HEMT), has been developed for better performance in general. pHEMTs are extensively used in wireless communications and Low-Noise Amplifiers (LNA) applications. This project proposes the development of two-dimensional (2D) physical modelling of delta-doped InGaAs/InAlAs pHEMT using the software MATLAB. Theoretical and experimental models are formed and compared to identify the behaviour of channel current, IDS for various gate-bias voltage, VGS relative to drain-source voltage, VDS in a depletion mode pHEMT. In the purpose of matching theoretical and experimental plots, empirical method was implemented followed by Design of Experiment (DOE) to study the factors influencing the curve matching. In conclusion, the desired curve matching was achieved and electron mobility, μn has been identified as the most significant factor in the process of developing the model. The developed physical model can be used for educational purposes in understanding pHEMT and its behaviour.

Contributor(s): Balamurali Sundararaj - Author Primary Item Type: Final Year Project Identifiers: Accession Number : 875006065 68 Language: English Subject Keywords: semiconductor industry; enhance; Field Effect Transistors (FET) First presented to the public: 6/1/2016 Original Publication Date: 6/14/2018 Previously Published By: Universiti Sains Malaysia Place Of Publication: School of Electrical & Electronic Engineering Citation: Extents: Number of Pages - 68 License Grantor / Date Granted:   / ( View License ) Date Deposited 2018-06-14 10:42:35.617 Date Last Updated 2019-01-07 11:24:32.9118 Submitter: Mohd Jasnizam Mohd Salleh

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