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Tungsten removal from chemical mechanical polishing (cmp) spent slurry using dowex monosphere mr-450 ultrapure water (upw) resin

Tungsten removal from chemical mechanical polishing (cmp) spent slurry using dowex monosphere mr-450 ultrapure water (upw) resin / Haslina Shamshuddin Jaya
Dalam proses pembuatan semikonduktor yang moden, pengilapan kimia-mekanik telah menjadi faktor yang penting dalam penghasilan litar bersepadu. Proses ini melibatkan pengilapan permukaan bersalut logam oleh proses kimia dan diikuti pembuangan lapisan logam yang telah terjejas oleh proses mekanikal untuk mencapai pengilatan yang sempurna menggunakan buburan tungsten. Pertukaran ion merupakan suatu proses yang menjadi pilihan untuk menghilangkan ion yang tidak diinginkan dengan memindahkan ion-ion tersebut ke resin yang sesuai. Oleh itu, pertukaran ion ialah salah satu cara penyingkiran logam beban daripada buburan terpakai untuk mencapai faedah persekitaran. Tujuan kajian ini adalah untuk mempelajari mekanisma penyingkiran bagi tungsten sebagai logam microelektronik yang dipergaruhi oleh kuantiti resin yang berlainan. Pencirian untuk campuran resin telah dianalisis dengan mengunakan analisa mikroskopi elektron imbasan (SEM) dan analisa X-Ray tenaga sebaran (EDX). Kepekatan ion bagi tungsten telah dinilai dengan menggunakan spektroskopi jisim induktif gandingan plasma (ICP-MS) pada kuantiti campuran resin Dowex monosphere MR-450 ultrapure water (UPW) yang berlainan (5g, 10g, 15g dan 20g) pada pH buburan yang tetap dalam proses kelompok. Campuran resin ini efektif untuk kuasa penyingkiran tungsten sebanyak lebih 96% bagi buburan tungsten terpakai pada pH 3.87 ± 0.02. Walau bagaimanapun, terdapat penurunan peratus dari 98% kepada 96% sekiranya kuantiti resin meningkat. Hal ini kerana semakin meningkat kuantiti resin, semakin meningkat keluasan penyerapan. Kuantiti resin yang optimum ialah 5g untuk 100mL buburan tungsten terpakai iaitu penyikiran sebanyak 98%. _______________________________________________________________________________________________________ In the modern semiconductor manufacturing processes, chemical mechanical polishing (CMP) has grown to be an essential part of the production of integrated circuit (IC) manufacturing. It involves the polishing of metallic surface by chemical action followed by the removal of the modified layer by mechanical action using tungsten slurry. Ion exchange process is used extremely for the removal of ionized impurities with proper resin selection. Therefore, ion exchange is one of the options to remove the heavy metal from spent slurry and to achieve environmental benefits that arise from the removal. The aim of this research is to study the removal mechanisms of tungsten, W, as a typical microelectronic metal under different resin loadings. Furthermore, surface analysis techniques which are scanning electron microscope (SEM) analysis and energy dispersive X-Ray (EDX) analysis were performed to study the characterization of the mixed bed resin with the CMP spent slurry. Concentration of tungsten removal was evaluated using inductively coupled plasma mass spectrometer (ICP-MS) by varying the amount of Dowex monosphere MR-450 UPW mixed resin loadings (5g, 10g, 15g and 20g) at constant pH slurry under batch process. It is found that this mixed resin is effective to remove tungsten for more than 96% from spent tungsten CMP slurry at pH 3.87 ± 0.02. However, the removal percentage decreases from 98% to 96% as the resin loadings amount increases due to an increase in the availability of more sorption sites. Optimum resin loading was found to be 5g for 100 mL of spent slurry as it give the highest removal of tungsten which is 98%.
Contributor(s):
Haslina Shamshuddin Jaya - Author
Primary Item Type:
Final Year Project
Identifiers:
Accession Number : 875007522
Language:
English
Subject Keywords:
semiconductor; chemical mechanical polishing (CMP); integrated circuit (IC)
First presented to the public:
6/1/2018
Original Publication Date:
7/18/2018
Previously Published By:
Universiti Sains Malaysia
Place Of Publication:
School of Chemical Engineering
Citation:
Extents:
Number of Pages - 85
License Grantor / Date Granted:
  / ( View License )
Date Deposited
2018-07-31 16:24:28.752
Date Last Updated
2019-01-07 11:24:32.9118
Submitter:
Mohd Jasnizam Mohd Salleh

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Tungsten removal from chemical mechanical polishing (cmp) spent slurry using dowex monosphere mr-450 ultrapure water (upw) resin1 2018-07-31 16:24:28.752