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A study of capacitance-voltage characteristics for metal-oxidesemiconductor structure on goldcompensated high resistivity silicon

A study of capacitance-voltage characteristics for metal-oxidesemiconductor structure on goldcompensated high resistivity silicon / Tan Jia Yiing
Matlamat untuk mencapai mikrogelombang kehilangan pengecilan rendah dalam sistem komunikasi tanpa wayar berkelajuan tinggi adalah penting dalam kemajuan evolusi teknologi. Pembawa bebas elektron dan pengaliran permukaan parasit menghalang kemajuan dalam bidang perhubungan wayarles. Kebelakangan ini, satu kaedah baru yang menggunakan pengedopan berperingkat dengan unsur emas supaya menghasilkan substrat silikon kerintangan tinggi untuk aplikasi gelombang mikro telah berjaya. Kini, tidak ada model litar setara dan persamaan matematik untuk mengelakan ciri kapasitans-voltan bagi struktur semikonduktor logam-oksida pada emas-kompensasi substrat silikon kerintangan tinggi. Siasatan terhadap ciri-ciri kapasitans-voltan untuk struktur semikonduktor logam-oksida pada kerintangan rendah, kerintangan tinggi dan emas-terkompensasi substrat silikon telah dijalankan. Persamaan matematik yang sesuai untuk mewakili keluk kapasitans-voltan silikon kerintangan rendah telah dinilai. Model litar setara silikon kerintangan tinggi untuk frekuensi rendah dan tinggi telah ditentukan dengan MATLAB dan disahkan melalui SILVACO. Model litar setara dan persamaan silikon kerintangan tinggi telah ditentukan dengan berjaya. Data eksperimen emaskompensasi silikon kerintangan tinggi dibandingkan dengan data teori silikon kerintangan tinggi. Berdasarkan hasil perbandingan keluk kapasitans-voltan, model litar setara bagi emas-terkompensasi kerintangan tinggi silikon didapati berbeza daripada silikon kerintangan tinggi. _______________________________________________________________________________________________________ The goal to achieve low microwave attenuation loss in a high-speed wireless communication system is crucial for the advancement of technology evolution. Background carrier and parasitic surface conduction hinder the progression of a wireless system to perform better. Recently, a new method using deep-level doping compensation with the gold element to create high resistivity silicon substrate for microwave application is successful. Currently, there is no existing equivalent circuit model and mathematical equations to classify capacitance-voltage characteristic for a metal-oxide structure on gold-compensated high resistivity silicon substrate. An investigation of capacitancevoltage characteristics for the metal-oxide-semiconductor structure on low resistivity, high resistivity and gold-compensated silicon substrates are carried out. The suitable mathematical equations to represent capacitance-voltage curves of low resistivity silicon is evaluated. High resistivity silicon equivalent circuit models for low and high frequencies are determined in MATLAB and verified in SILVACO. The equivalent circuit models and equations of high resistivity silicon are determined successfully. Experimental data of Au-compensated high resistivity silicon is compared and analysed with theoretical high resistivity silicon data. Based on the comparison result of both C-V curves, the equivalent circuit of gold-compensated high resistivity silicon is not same as the high resistivity silicon.
Contributor(s):
Tan Jia Yiing - Author
Primary Item Type:
Final Year Project
Identifiers:
Accession Number : 875007136
Barcode : 00003107014
Language:
English
Subject Keywords:
high-speed wireless communication system; technology evolution; high resistivity silicon
First presented to the public:
6/1/2017
Original Publication Date:
4/20/2018
Previously Published By:
Universiti Sains Malaysia
Place Of Publication:
School of Electrical & Electronic Engineering
Citation:
Extents:
Number of Pages - 95
License Grantor / Date Granted:
  / ( View License )
Date Deposited
2018-04-20 16:48:28.349
Date Last Updated
2019-01-07 11:24:32.9118
Submitter:
Mohd Jasnizam Mohd Salleh

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A study of capacitance-voltage characteristics for metal-oxidesemiconductor structure on goldcompensated high resistivity silicon1 2018-04-20 16:48:28.349