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Monolithic microwave integrated circuit (mmic) power amplifier / Ang Chin Guek

Monolithic microwave integrated circuit (mmic) power amplifier_Ang Chin Guek_E3_2009_875004553_00003095376_NI

Abstract Tujuan projek ini ialah untuk mereka satu amplifier kuasa MMIC untuk perhubungan tanpa talian (wayarles) dengan menggunakan 0.15 μm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) teknologi dengan satu kelebaran get 100 μm dan 10 batang jari pada frekuensi rendah yang tertentu iaitu pada 2.4 GHz dan 3.5 GHz. Projek ini akan menumpukan pada persembahan amplifier kuasa dan rekabentuk susun atur. Metodologi reka bentuk untuk reka bentuk amplifier kuasa boleh dibahagi-bahagikan kepada tiga bahagian utama: reka bentuk senibina, kecil isyarat reka bentuk, dan pengoptimuman isyarat besar. Untuk 2.4 GHz amplifier kuasa, dengan 3.0 V parit voltan, amplifier telah mencapai keuntungan 17.265 dB kecil isyarat, input dan kehilangan balikan output 16.310 dB dan 14.418 dB, 14.862 dBm keuntungan 1 dB kuasa mampatan dengan 12.318 % power-added kecekapan (PAE). Untuk amplifier kuasa 3.5 GHz, amplifier telah mencapai 14.434 dB keuntungan kecil isyarat, input dan kehilangan balikan output 12.612 dB dan 11.746 dB, 14.665 dBm keuntungan 1 dB kuasa mampatan dengan 11.796 % power-added kecekapan (PAE). Amplifier kuasa untuk frekuensi mengacukan 2.4 GHz berkaitan ke LAN Wireless aplikasi-aplikasi seperti WiFi dan WPAN manakala amplifier kuasa untuk frekuensi mengacukan 3.5 GHz berkaitan ke stesen pangkal WiMax dan W-CDMA. Untuk amplifier kuasa MMIC, syarat-syarat bagi amplifier kuasa termasuk aspek kecekapan tinggi, pahala besar, kandang tanpa syarat dan operasi di 2.4 GHz dan 3.5 GHz adalah dihasilkan. _________________________________________________________________________________________ The aim of this project was to design a MMIC power amplifier for wireless application by using 0.15 μm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) technology with a gate width of 100 μm and 10 fingers at certain low frequency points at 2.4 GHz and 3.5 GHz. This project will focus on the power amplifier performances and layout design. The design methodology for power amplifier design can be broken down into three main sections: architecture design, small-signal design, and large-signal optimization. For 2.4 GHz power amplifier, with 3.0 V drain voltage, the amplifier has achieved 17.265 dB small-signal gain, input and output return loss of 16.310 dB and 14.418 dB, 14.862 dBm 1-dB gain compression power with 12.318 % power-added efficiency (PAE). For 3.5GHz power amplifier, the amplifier has achieved 14.434 dB small-signal gain, input and output return loss of 12.612 dB and 11.746 dB, 14.665 dBm 1-dB gain compression power with 11.796 % power-added efficiency (PAE). The power amplifier for frequency point at 2.4 GHz applies for Wireless LAN applications such as WiFi and WPAN whereas power amplifier for frequency point at 3.5 GHz applies for WiMax base station and W-CDMA. For the power amplifier MMIC, the requirements of power amplifier including aspects of high efficiency, high gain, unconditional stable and operation at 2.4 GHz and 3.5 GHz are produced.

Contributor(s): Ang Chin Guek - Author Primary Item Type: Final Year Project Identifiers: Accession Number : 875004553 Language: English Subject Keywords: wireless; Power Pseudomorphic High Electron Mobility Transistor (PHEMT); MMIC power amplifier First presented to the public: 4/1/2009 Original Publication Date: 10/2/2018 Previously Published By: Universiti Sains Malaysia Place Of Publication: School of Electrical & Electronic Engineering Citation: Extents: Number of Pages - 133 License Grantor / Date Granted:   / ( View License ) Date Deposited 2018-10-02 15:14:31.561 Date Last Updated 2019-01-07 11:24:32.9118 Submitter: Nor Hayati Ismail

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