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Quantum device modelling of the ingaasalas resonant tunnelling diode

Quantum device modelling of the ingaasalas resonant tunnelling diode / Lim Kah Hooi
Dalam pengkajian ini, InGaAs/AlAs digunakan sebagai bahan-bahan utama untuk RTD. Operasi RTD adalah berdasarkan kuantum mekanik, iaitu partikel-partikel akan menembusi dinding penghalang. Simulasi MATLAB digunakan demi mengkaji teori dan prinsip RTD. Parameter-paramter yang tidak diketahui seperti A, B, C, D, n1, n2, and H perlu ditentukan melalui perhitungan agar lengkungan IV yang disimulasi selaras dengan lengkungan IV yang diberikan. Parameter-parameter bagi struktur RTD seperti ketebalan dinding penghalang dan lain-lain perlu diperoleh selepas proses simulasi. Selain itu, gambah rajah litar bagi RTD direka dan dilukis dengan menggunakan LTspice dan disimulasi seterusnya. “Library file” bagi litar RTD dibuat untuk perkembangan masa depan. Pengkajian ini agak berjaya kerana keputusan yang didapat agak memuaskan. Lengkungan IV yang didapati melalui simulasi MATLAB dapat selaras dengan lengkungan IV yang diberikan dan nilai-nilai parameter bagi struktur RTD yang didapati boleh diterima. Di samping itu, lengkungan IV yang didapati melalui simulasi LTspice adalah selaras dengan lengkungan IV yang diberikan dan “library file” bagi litar RTD dibuktikan dapat berfungsi melalui simulasi LTspice. _______________________________________________________________________________________________________ In this research, the material InGaAs/AlAs is used as the material for the double barriers resonant tunnelling diode (RTD). The operation of RTD is based on the quantum mechanics, in which the particles will pass through the barrier walls by tunnelling method. In order to study the theory and the principle of the RTD devices, curve fitting using MATLAB had been simulated. The unknown parameter such as A, B, C, D, n1, n2, and H need to be determined through calculation to ensure the simulated IV curve is fitted with the measured IV curve. The device structural parameters such as the effective mass, quantum well thickness and the barrier thickness are obtained after the simulation. Furthermore, the large signal representation of RTD is drawn using LTspice and simulated afterwards. The library file for the large signal representation of RTD is then created for the future development. From the results obtained, it can be concluded that this research is a success. The MATLAB simulated IV curve is fitted with the measured result and the device structural parameters are within the acceptable range. Moreover, the LTspice simulated result is fitted with the measured IV curve as well as the library file was proved its correctness after the simulation.
Contributor(s):
Lim Kah Hooi - Author
Primary Item Type:
Final Year Project
Identifiers:
Accession Number : 875006032
Language:
English
Subject Keywords:
InGaAs/AlAs; material; resonant tunnelling diode (RTD)
First presented to the public:
6/1/2016
Original Publication Date:
5/16/2018
Previously Published By:
Universiti Sains Malaysia
Place Of Publication:
School of Electrical & Electronic Engineering
Citation:
Extents:
Number of Pages - 90
License Grantor / Date Granted:
  / ( View License )
Date Deposited
2018-06-20 14:40:43.777
Date Last Updated
2019-01-07 11:24:32.9118
Submitter:
Mohd Jasnizam Mohd Salleh

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Quantum device modelling of the ingaasalas resonant tunnelling diode1 2018-06-20 14:40:43.777