Resonant tunneling diode (RTD) merupakan sejenis elektronik peranti nano skala yang menggunakan fenomena kuantum mekanikal untuk menghasil rintangan pengkamiran negative (negative differential resistance, NDR). Sifat unik NDR ini telah menyumbang kepada rekaan pelbagai peranti elektronik seperti peranti ultra-cepat, peranti kuasa rendah dan peranti frekuensi terahertz hasil daripada kelajuan pensuisan peranti tersebut. RTD beroperasi berdasarkan prinsip terowong kuantum elektron melalui potensi penghalang ke tenaga kuantisasi untuk menghasilkan pengkamiran negative dalam ciri-ciri penghantaran. Dalam project ini, simulasi ciri-ciri arus-voltasi ke atas III-V kompaun GaAs/AlAs RTD telah dijalankan untuk mengkaji kesan kuantum mekanikal terowong RTD. Kuantum peranti pemodelan telah guna dalam simulasi ini. Alat simulasi berdasarkan Tak Seimbang Fungsi Green (Non-Equilibrium Green Function, NEGF) formalisme yang menggunakan pendekatan massa berkesan telah digunakan dalam kuantum penghantaran simulasi ini. Dalam project ini, perisian simulasi fizikal yang bernama Silvaco telah digunakan dalam simulasi ciri-ciri arus-voltasi GaAs/AlAs RTD ini. Kedua-dua ciri-ciri arus-voltasi simulasi and ukuran RTD telah dibanding untuk mendapatkan penyuaian yang terbaik dengan mengubah epilayer dan sifat bahan.
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Resonant tunneling diode (RTD) is a nanoscale electronic device that makes use of quantum mechanical tunneling phenomenon to produce negative differential resistance (NDR). This unique property allows the design of ultra-fast, low power consumption and terahertz frequency devices due to its extremely high switching speed. RTDs operate based on the principle of quantum tunneling of electrons through a potential barrier into a quantized well state to produce negative resistance in the transmission characteristic. In this work, the simulation on current-voltage characteristics of III-V compound semiconductor GaAs/AlAs RTD is used to study the effect of quantum mechanical tunneling nature of RTD. Quantum device modelling is implemented in this simulation. A simulation tool based on Non-Equilibrium Green Function (NEGF) formalism which uses effective mass approach has also been employed in this quantum transport simulation. In this project, physical simulation software namely Silvaco is used to simulate the current-voltage characteristics of GaAs/AlAs RTD. Simulation and measured current-voltage characteristic of the RTD are then compared to find the best fit through varying the epilayer and material properties.
Physical simulation of the III-V compound semiconductor GaAs-AlAs resonant tunneling diode / Ng Kah Pei